WebJun 15, 2015 · A new facile method is described for high-aspect-ratio patterning by a neutral cluster beam. In this study, we selected a ClF 3-Ar neutral cluster beam in order to … WebAbstract: The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal reactor. The etch rate, greater than 10 um/min, can be obtained for both the C-face and Si-face at substrate temperatures higher than 723 K.
High-aspect-ratio patterning by ClF3-Ar neutral cluster etching
WebApr 18, 2015 · Start etch process Setpoint bypass pressure 75torr Setpoint bypass pressure from 75 50torr Etch terminated setpointbypass pressure torrNF in-situclean Etchdetails ASM2004 Front-End Operations Confidential proprietaryinformation before (900nm) partial clean after clean situcleaning BTBAS furnace holderboat ASM2004 Front-End … WebSep 29, 2016 · A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and deactivating the pin-holes at the various positions of the gas distributor, the etching … food to decrease aic
Selective etching of silicon nitride over silicon oxide using …
WebThe time dependent-etch characteristics of ClF 3, ClF 3 & H 2 remote plasma showed little loading effect during the etching of silicon nitride on oxide/nitride stack wafer with similar etch rate with that of blank nitride wafer.” Find the open access technical paper here. Published April 2024. WebDec 1, 1999 · Reactive sputter etching in fluorocarbon gases (i.e. CF4, CHF3) not only results in a large increase of the etch rates, but it can also be used for a high fidelity pattern transfer from patterns… 119 Fabrication of sub‐20 nm trenches in silicon nitride using CHF3/O2 reactive ion etching and oblique metallization T. Wong, S. Ingram WebSep 16, 2003 · On the basis of these results, the effect of the gas addition to Ar on the characteristics of TiN reactive ion etching is considered as follows; under the Ar/CHF 3 … electric lift commode